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LA75520KVA Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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LA75520KVA Datasheet(HTML) 3 Page - Sanyo Semicon Device |
3 / 12 page ![]() LA75520KVA No.A0654-3/12 Continued from preceding page. Ratings Parameter Symbol Conditions No. min typ max Unit Group delay 3-1 I (4.4M) IGD3-1 wrt 1MHz V37 80 120 160 ns Group delay 4 DK (4M) DGD4 wrt 1MHz V38 10 30 50 ns Group delay 4-1 DK (4.4M) DGD4-1 wrt 1MHz V39 30 60 90 ns Video f characteristics MN1 VFMN1 M/N 1 to 2MHz V40 -1.0 0.0 1.0 dB Video f characteristics MN2 VFMN2 M/N 2 to 3MHz V41 -1.0 0.0 1.0 dB Video f characteristics MN3 VFMN3 M/N 3.58MHz V42 -3.0 -1.5 0.0 dB Video f characteristics BG1 VFBG1 B/G 1 to 3MHz V43 -1.0 0.0 1.5 dB Video f characteristics BG2 VFBG2 B/G 3 to 4MHz V44 -1.5 0.0 1.5 dB Video f characteristics BG3 VFBG3 B/G 4.43MHz V45 -2.5 -1.0 0.5 dB Video f characteristics I1 VFI1 I 1 to 3MHz V46 -1.0 0.0 1.0 dB Video f characteristics I2 VFI2 I 3 to 4MHz V47 -1.0 0.0 1.5 dB Video f characteristics I3 VFI3 I 4.43MHz V48 -1.5 0.0 1.5 dB Video f characteristics DK1 VFDK1 D/K 1 to 3MHz V49 -1.0 0.0 1.0 dB Video f characteristics DK2 VFDK2 D/K 3 to 4MHz V50 -1.0 0.0 1.5 dB Video f characteristics DK3 VFDK3 D/K 4.43MHz V51 -1.5 0.0 1.5 dB Group delay 2-2 BG shift (4M) BGD2-2 wrt 1MHz V52 50 100 150 ns Group delay 2-3 BG shift (4.4M) BGD2-3 wrt 1MHz V53 110 180 250 ns 1st SIF Block SIF carrier output level 1 So1 Vi = 1mV F1 21 43 86 mVrms SIF carrier output level 2 So2 Vi = 10mV F2 21 43 86 mVrms 1st SIF max input Si max F3 110 120 dB μV 1st SIF input resistance Ris 33.4MHz F4 2 2.4 k Ω 1st SIF input capacity Cis 33.4MHz F5 3 6 pF SIF Block Limiting sensitivity (SPLIT) Vi (lim) (SP) P = 80dB μ CW S1 20 25 30 dB μV Limiting sensitivity (INTER) Vi (lim) (IN) P = 80dB μ P/S S2 29 35 41 dB FM detection output voltage VO (FM) f = 5.5MHz, ΔF = ±30kHz S3 390 560 730 mVrms AM removal ratio AMR S4 50 60 dB Distortion factor THD S5 0.3 0.8 % FM detection output S/N S/N (FM) P = 80dB μ CW S6 55 60 dB PAL/NT audio voltage gain difference GD S7 6 dB PAL De-emphasis Pdeem S8 -3 dB NT De-emphasis Ndeem S9 -3 dB Control Block SIF system SW threshold voltage A/B V7_9th C1 2.2 2.5 2.8 V 38MHz/38.9MHz threshold voltage V10th1 C2 0.7 1.0 1.3 V 38.9MHz/39.5MHz threshold voltage V10th2 C3 3.7 4.0 4.3 V Inter-carrier system V13th C4 0.3 V AFT mute level/SIF trap shift threshold voltage 1 V15th1 C5 0.7 1.0 1.3 V AFT mute level/SIF trap shift threshold voltage 2 V15th2 C6 2.2 2.5 2.8 V AFT mute level/SIF trap shift threshold voltage 3 V15th3 C7 3.7 4.0 4.3 V Others Ref clock input level Reflev 4.0MHz O1 83 90 95 dB μV Reference frequency SW threshold resistance R11 O2 150 270 k Ω Continued on next page. |
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