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SIHF840LCST Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SIHF840LCST
Description  Power MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SIHF840LCST Datasheet(HTML) 2 Page - Vishay Siliconix

   
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www.vishay.com
Document Number: 91068
2
S-Pending-Rev. A, 02-Jun-08
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Uses SiHF840LC data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-40
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-1.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mAc
-0.63
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 4.8 Ab
-
-
0.85
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 4.8 Ab
4.0
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
-
1100
-
pF
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-18
-
Total Gate Charge
Qg
VGS = 10 V
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13b, c
--
39
nC
Gate-Source Charge
Qgs
--
10
Gate-Drain Charge
Qgd
--
19
Turn-On Delay Time
td(on)
VDD = 250 V, ID = 8.0 A,
RG = 9.1 Ω, RD = 30 Ω, see fig. 10b, c
-12
-
ns
Rise Time
tr
-25
-
Turn-Off Delay Time
td(off)
-27
-
Fall Time
tf
-19
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
8.0
A
Pulsed Diode Forward Currenta
ISM
--
28
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/µsb, c
-
490
740
ns
Body Diode Reverse Recovery Charge
Qrr
-3.0
4.5
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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