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SIHF840A Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHF840A Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91065 4 S-81275-Rev. A, 16-Jun-08 IRF840A, SiHF840A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 1 102 103 102 91065_05 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 10 10 105 104 103 91065_06 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 10 40 30 20 I D = 8.0 A V DS = 100 V V DS = 250 V For test circuit see figure 13 V DS = 400 V 91065_07 V GS = 0 V VSD, Source-to-Drain Voltage (V) 102 10 1 0.1 0.2 0.5 0.8 1.4 1.1 T J = 25 °C T J = 150 °C 102 91065_08 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) T C = 25 °C T J = 150 °C Single Pulse VDS, Drain-to-Source Voltage (V) 10 1 0.1 104 10 103 102 |
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