Document Number: 91058

www.vishay.com

S-Pending-Rev. A, 02-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRF820A/SiHF820A data and test conditions.

PRODUCT SUMMARY

500

3.0

17

4.3

8.5

Configuration

Single

N-Channel MOSFET

G

D

S

(TO-263)

G

D

S

(TO-262)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRF820ASPbF

IRF820ALPbF

SiHF820AS-E3

SiHF820AL-E3

SnPb

IRF820AS

IRF820AL

SiHF820AS

SiHF820AL

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

2.5

A

1.6

10

Linear Derating Factor

0.4

W/°C

10

A

140

mJ

2.5

A

5.0

mJ

Maximum Power Dissipation

50

W

dV/dt

3.4

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply