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SIHF644NSTR-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIHF644NSTR-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 91038 www.vishay.com S-Pending-Rev. A, 19-Jun-08 3 IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. This is only applied to TO-220 package. d. When mounted on 1" square PCB (fr-4 or G-10 material). TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 14 A Pulsed Diode Forward Currenta ISM -- 56 Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb -- 1.3 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb - 165 250 ns Body Diode Reverse Recovery Charge Qrr -1.0 1.6 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT S D G VDS, Drain-to-Source Voltage (V) 4.5V 20μs PULSE WIDTH Tj = 25°C 0.1 1 10 100 0.1 1 10 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VDS, Drain-to-Source Voltage (V) 4.5V 20μs PULSE WIDTH Tj = 175°C 0.1 1 10 100 0.1 1 10 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V |
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