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SIHF9Z34STL-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIHF9Z34STL-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 91093 www.vishay.com S-Pending-Rev. A, 03-Jun-08 3 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRF9Z34/SiHF9Z34 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 18 A Pulsed Diode Forward Currenta ISM -- - 72 Body Diode Voltage VSD TJ = 25 °C, IS = - 18 A, VGS = 0 Vb -- - 6.3 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/µsb, c - 100 200 ns Body Diode Reverse Recovery Charge Qrr - 280 520 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT S D G |
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