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50SQ100G Datasheet(PDF) 1 Page - Vishay Siliconix |
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50SQ100G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 93356 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 07-Nov-08 1 Schottky Rectifier, 5 A 50SQ...G Series Vishay High Power Products FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Lead (Pb)-free • Designed and qualified for industrial level DESCRIPTION The 50SQ...G axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 5 A VR 60 to 100 V DO-204AR Cathode Anode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 5 A VRRM Range 60 to 100 V IFSM tp = 5 µs sine 1900 A VF 5 Apk, TJ = 125 °C 0.52 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL 50SQ060G 50SQ080G 50SQ100G UNITS Maximum DC reverse voltage VR 60 80 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 119 °C, rectangular waveform 5 A Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 1900 10 ms sine or 6 ms rect. pulse 290 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, 46 µs square pulse 7.5 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by, TJ maximum VA = 1.5 x VR typical 1.0 A |
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