Document Number: 91089

www.vishay.com

S-Pending-Rev. A, 02-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Surface Mount (IRF9Z14S/SiHF9Z14S)

• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)

• 175 °C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

accommodating die size up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

for high current applications because of is low internal

connection resistance and can dissipate up to 2.0 W in a

typical surface mount application.

The

through-hole

version

(IRF9Z14L/SiHF9Z14L)

is

available for low-profile applications.

Note

a. See device orientation.

PRODUCT SUMMARY

- 60

0.50

12

3.8

5.1

Configuration

Single

S

G

D

P-Channel MOSFET

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRF9Z14SPbF

IRF9Z14LPbF

SiHF9Z14S-E3

SiHF9Z14L-E3

SnPb

IRF9Z14S

-

SiHF9Z14S

-

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 60

V

Gate-Source Voltage

± 20

- 6.7

A

- 4.7

- 27

Linear Derating Factor

0.29

W/°C

140

mJ

- 6.7

A

4.3

mJ

Maximum Power Dissipation

3.7

W

43

* Pb containing terminations are not RoHS compliant, exemptions may apply