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IRF9Z14STRLPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF9Z14STRLPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91089 www.vishay.com S-Pending-Rev. A, 02-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix FEATURES • Advanced Process Technology • Surface Mount (IRF9Z14S/SiHF9Z14S) • Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9Z14L/SiHF9Z14L) is available for low-profile applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S G D P-Channel MOSFET D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF9Z14SPbF IRF9Z14STRLPbFa IRF9Z14LPbF SiHF9Z14S-E3 SiHF9Z14STL-E3a SiHF9Z14L-E3 SnPb IRF9Z14S IRF9Z14STRLa - SiHF9Z14S SiHF9Z14STLa - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currente VGS at - 10 V TC = 25 °C ID - 6.7 A TC = 100 °C - 4.7 Pulsed Drain Currenta, e IDM - 27 Linear Derating Factor 0.29 W/°C Single Pulse Avalanche Energyb, e EAS 140 mJ Avalanche Currenta IAR - 6.7 A Repetiitive Avalanche Energya EAR 4.3 mJ Maximum Power Dissipation TC = 25 °C PD 3.7 W TA = 25 °C 43 * Pb containing terminations are not RoHS compliant, exemptions may apply |
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