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SIHF9Z22 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHF9Z22 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91350 2 S-Pending-Rev. A, 10-Jun-08 IRF9Z22, SiHF9Z22 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -80 °C/W Case-to-Sink, Flat, Greased Surface RthCS 1.0 - Maximum Junction-to-Case (Drain) RthJC -3.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 50 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 500 nA Zero Gate Voltage Drain Current IDSS VDS = max. rating, VGS = 0 V - - - 250 µA VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C - - - 1000 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 5.6 Ab - 0.28 0.33 Ω Forward Transconductance gfs VDS = 2 x VGS, IDS = - 5.6 Ab 2.3 3.5 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 - 480 - pF Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss -58 - Total Gate Charge Qg VGS = - 10 V ID = - 9.7 A, VDS = - 0.8 max. rating. see fig. 17 -17 26 nC Gate-Source Charge Qgs -4.1 6.2 Gate-Drain Charge Qgd -5.7 8.6 Turn-On Delay Time td(on) VDD = - 25 V, ID = - 9.7 A, RG = 18 Ω, RD = 2.4 Ω, see fig. 16 (MOSFET switching times are essentially independent of operating temperature) -8.2 12 ns Rise Time tr -57 86 Turn-Off Delay Time td(off) -12 18 Fall Time tf -25 38 Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 9.7 A Pulsed Diode Forward Currenta ISM -- - 39 Body Diode Voltage VSD TJ = 25 °C, IS = - 9.7 A, VGS = 0 Vb -- - 6.3 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/µsb 56 110 280 ns Body Diode Reverse Recovery Charge Qrr 0.17 0.34 0.85 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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