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21TT100 Datasheet(PDF) 4 Page - Vishay Siliconix |
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21TT100 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94404 4 Revision: 05-Sep-08 21TT100 Vishay High Power Products High Performance Schottky Generation 5.0, 20 A Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR AverageForwardCurrent-IF (AV)(A) 0 5 10 15 20 25 30 100 120 140 160 180 DC Square wave (D=0.50) 80% rated Vr applied see note (1) AverageForwardCurrent-IF (AV) (A) 0 5 10 15 20 25 30 0 5 10 15 20 180° 120° 90° 60° 30° DC RMS Limit SquareWavePulseDuration-t p (microsec) 10 100 1000 10000 100 1000 |
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