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10BQ015PBF Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. 10BQ015PBF
Description  Schottky Rectifier, 1.0 A
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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10BQ015PBF Datasheet(HTML) 2 Page - Vishay Siliconix

   
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www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94110
2
Revision: 04-Nov-08
10BQ015PbF
Vishay High Power Products Schottky Rectifier, 1.0 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
See fig. 1
VFM (1)
1 A
TJ = 25 °C
0.35
V
2 A
0.44
1 A
TJ = 125 °C
0.32
2 A
0.40
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
0.5
mA
TJ = 100 °C
12
Threshold voltage
VF(TO)
TJ = TJ maximum
-V
Forward slope resistance
rt
-m
Ω
Typical junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
390
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction temperature range
TJ (1)
- 55 to 125
°C
Maximum storage temperature range
TStg
- 55 to 150
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
36
°C/W
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
80
Approximate weight
0.10
g
0.003
oz.
Marking device
Case style SMB (similar to DO-214AA)
V1C
dP
tot
dT
J
-------------
1
R
thJA
--------------
<


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