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STL150N3LLH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL150N3LLH5 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page September 2008 Rev 3 1/12 12 STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STL150N3LLH5 30 V <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ ( 6x5 ) Table 1. Device summary Order code Marking Package Packaging STL150N3LLH5 150N3LLH5 PowerFLAT™ (6x5) Tape and reel www.st.com |
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