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STK820 Datasheet(PDF) 5 Page - STMicroelectronics |
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STK820 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STK820 Electrical characteristics 5/15 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 12.5 V, ID= 10.5 A, RG= 4.7 Ω, VGS= 4.5 V (see Figure 16) 15 23 ns ns td(off) tf Turn-off delay time Fall time VDD=12.5 V, ID= 10.5 A, RG= 4.7 Ω, VGS= 4.5 V (see Figure 16) 17 4 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by package Source-drain current Source-drain current (pulsed) 21 84 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 21 A, VGS= 0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 21 A, di/dt = 100 A/µs, VDD= 20 V, Tj=150 °C (see Figure 15) 25 17 1.4 ns nC A |
Similar Part No. - STK820_08 |
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Similar Description - STK820_08 |
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