STP85N3LH5 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STP85N3LH5

Description	N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STD85N3LH5 - STP85N3LH5 - STU85N3LH5

Electrical characteristics

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Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 5 V

(see Figure 15)

6

14

ns

td(off)

tf

Turn-off delay time

Fall time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 5 V

(see Figure 15)

23.6

10.8

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

80

320

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 40 A, VGS = 0

1.1

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A,

di/dt = 100 A/µs,

VDD = 20 V

(see Figure 17)

31.8

26.1

1.6

ns

nC

A

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