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CM1621 Datasheet(PDF) 3 Page - California Micro Devices Corp |
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CM1621 Datasheet(HTML) 3 Page - California Micro Devices Corp |
3 / 9 page © 2008 California Micro Devices Corp. All rights reserved. 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 3 Issue A – 8/4/08 CM1621 Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: These parameters are guaranteed by design and characterization. Note 4: Attenuation / RF curves characterized by a network analyzer using microprobes. Note 5: These parameters are NOT guaranteed by design, characterization and production. ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 85 100 115 Ω CTOTAL Total Channel Capacitance At 2.5VDC Reverse Bias, 1MHz, 30mVAC 27 34 41 pF C Capacitance C At 2.5VDC Reverse Bias, 1MHz, 30mVAC 17 pF VDIODE Standoff Voltage IDIODE = 10μA6.0 V ILEAK Diode Leakage Current (reverse bias) VDIODE = +3.3V 200 nA VSIG Signal Clamp Voltage ILOAD = 1.0mA 6.0 7.0 8.0 V VESD In-system ESD Withstand Voltage a) Human Body Model (HBM), MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2 and 3 ±30 ±15 kV kV RDYN Dynamic Resistance Positive Negative 2.3 0.9 Ω Ω f C Cut-off Frequency ZSOURCE = 50Ω, ZLOAD = 50Ω Channel R = 100 Ω, Channel C = 15pF 90 135 Note 3 MHz A1GHz Absolute Attenuation @ 1GHz from 0dB Level ZSOURCE = 50Ω, Z LOAD = 50Ω, DC Bias = 0V; Notes 1, 4, 5 -40 dB A800MHz - 3 GHz Absolute Attenuation @ 800MHz to 3GHz from 0dB Level ZSOURCE = 50Ω, Z LOAD = 50Ω, DC Bias = 0V; Notes 1, 4, 5 -35 dB |
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