CR3JM datasheet(2/4 Pages) MITSUBISHI

Part #	CR3JM

Description	LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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2 / 4 page

Feb.1999

MITSUBISHI SEMICONDUCTOR

〈HIGH-SPEED SWITCHING THYRISTOR〉

CR3JM

LOW POWER, STROBE USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

Symbol

IRRM

IDRM

VTM

VGT

VGD

IGT

Cc

Test conditions

Tj=25

°C, VRRM applied

Tj=25

°C, VDRM applied

Tc=25

°C, ITM=3A, Instantaneous value

Tj=25

°C, VD=6V, RL=6Ω

Tj=125

°C, VD=1/2VDRM

Tj=25

°C, VD=6V, RL=6Ω

CM=1800

µF, VCM=350V, ITM=240A, L=50µH, VGK=–6V,

Ta=25

°C

Unit

mA

V

mA

µF

Typ.

—

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Commutating capacitor

V2

Min.

—

0.1

—

Max.

0.1

1.8

2.0

—

50

2.8

Limits

ELECTRICAL CHARACTERISTICS

V2. Refer to sections 3 on STROBE FLASHER APPLICATION.

10

02

8

46

9

17

35

103

7

5

3

2

102

7

5

3

2

101

7

5

3

2

100

Tc = 25°C

10–1

23

100

57 101 23 5 7 102 23 5 7 103

101

7

5

3

2

100

7

5

3

2

7

5

3

2

10–2

VFGM = 6V

VGT = 2.0V

IGT = 50mA

(Tj = 25°C)

PGM = 3W

VGD = 0.1V

IFGM = 1A

PG(AV)

= 0.3W

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

GATE CHARACTERISTICS

GATE CURRENT (mA)

PERFORMANCE CURVES

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