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1N4150-TAP Datasheet(PDF) 2 Page - Vishay Siliconix |
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1N4150-TAP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85522 Rev. 1.7, 16-Feb-07 1N4150 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in mm (inches): DO35 Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 1 mA VF 540 620 mV IF = 10 mA VF 660 740 mV IF = 50 mA VF 760 860 mV IF = 100 mA VF 820 920 mV IF = 200 mA VF 870 1000 mV Reverse current VR = 50 V IR 100 nA VR = 50 V, Tj = 150 °C IR 100 µA Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 2.5 pF Reverse recovery time IF = IR = (10 to 100) mA, iR = 0.1 x IR, RL = 100 Ω trr 4ns Figure 1. Reverse Current vs. Junction Temperature 040 80 120 160 200 0.01 0.1 1 10 100 Tj - Junction Temperature (°C) 94 9100 Scattering Limit V R = 50 V Figure 2. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9162 Scattering Limit Tj = 25 °C 94 9366 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) Cathode Identification Rev. 6 - Date: 29.January 2007 Document no.: 6.560-5004.02-4 |
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