DG636 datasheet(5/10 Pages) VISHAY

Part #	DG636

Description	0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 10 page

Document Number: 69901

S-80239-Rev. B, 04-Feb-08

www.vishay.com

5

Vishay Siliconix

DG636

New Product

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS FOR SINGLE SUPPLY

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 3 V, V- = 0 V

VIN A0, A1 and ENABLE = 1.4 V, 0.6 V

a

Temp.b

Typ.c

- 40 to + 125 °C - 40 to + 85 °C

Unit

Min.d

Max.d

Min.d

Max.d

Analog Switch

Analog Signal Rangee

VANALOG

Full

3

V

On-Resistance

rDS(ON)

IS = 1 mA, VD = + 1.5 V

Room

Full

200

245

325

245

290

Ω

On-Resistance Match

Δr

ON

IS = 1 mA, VD = + 1.5 V

Room

Full

56

13

11

6

Switch Off Leakage Current

IS(off)

V+ = 3.0 V, V- = 0 V

VD = 1 V/3.0 V, VS = 3.0 V/1 V

Room

Full

± 0.01

- 0.1

- 18

0.1

18

- 0.1

- 0.5

0.1

0.5

nA

ID(off)

Room

Full

± 0.01

- 0.1

- 18

0.1

18

- 0.1

- 0.5

0.1

0.5

Channel On Leakage Current

ID(on)

V+ = 3.0 V, V- = 0 V

VS = VD = 1 V/3.0 V

Room

Full

± 0.01

- 0.1

- 18

0.1

18

- 0.1

- 0.5

0.1

0.5

Digital Control

Input Current, VIN Low

IL

VIN A0, A1 and ENABLE

Under Test = 0.6 V

Full

0.005

- 1

1

- 1

1

µA

Input Current, VIN High

IH

VIN A0, A1 and ENABLE

Under Test = 1.4 V

Full

0.005

- 1

1

- 1

1

Input Capacitance

CIN

f = 1 MHz

Room

4.3

pF

Dynamic Characteristics

Transition Time

tTRANS

VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V,

RL = 300 Ω, CL = 35 pF

Room

Full

95

130

190

130

160

ns

Enable Turn-On Time

tON(EN)

Room

Full

77

108

161

108

131

Enable Turn-Off Time

tOFF(EN)

Room

Full

35

76

112

76

88

Break-Before-Make-Time

tBMM

Room

Full

45

55

Charge Injection

Q

CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V

Full

1.2

pC

Off-Isolatione

OIRR

f = 10 MHz, RL = 50 Ω, CL = 5 pF

Room

- 57

dB

Crosstalke

XTALK

Room

- 93

Bandwidthe

BW

RL = 50 Ω

Room

442

MHz

Total Harmonic Distortion

THD

Signal = 1 VRMS, 20 Hz to 20 kHz,

RL = 600 Ω

Room

0.09

%

Source Off Capacitancee

CS(off)

f = 1 MHz

Room

2.5

pF

Drain Off Capacitancee

CD(off)

6.4

Channel On Capacitancee

CD(on)

11.7

Power Supplies

Power Supply Current

I+

VIN = 0 V, or V+

Room

Full

0.001

0.5

1

0.5

1

µA

Negative Supply Current

I-

Room

Full

- 0.001

- 0.5

- 1

- 0.5

- 1

Ground Current

IGND

Room

Full

- 0.001

- 0.5

- 1

- 0.5

- 1

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