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DG442DY-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG442DY-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 70053 S-71241–Rev. I, 25-Jun-07 Vishay Siliconix DG441/442 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa FOR SINGLE SUPPLY Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 V f Tempb Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Unit Mind Maxd Mind Maxd Analog Switch Analog Signal Rangee VANALOG Full 0 12 0 12 V Drain-Source On-Resistance rDS(on) IS = - 10 mA, VD = 3 V, 8 V V+ = 10.8 V Room Full 100 160 200 160 200 Ω Dynamic Characteristics Turn-On Time tON RL = 1 kΩ, CL = 35 pF VS = 8 V See Figure 2 Room 300 450 450 ns Turn-Off Time tOFF Room 60 200 200 Charge Injection Q CL = 1nF, Vgen = 6 V, Rgen = 0 Ω Room 2 pC Power Supplies Positive Supply Current I+ V+ = 13.2 V, V- = 0 V VIN = 0 or 5 V Full 15 100 100 µA Negative Supply Current I- Room Full - 0.0001 - 1 - 100 - 1 - 100 Ground Current IGND Full - 15 - 100 - 100 |
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