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DG428DN Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG428DN Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 12 page DG428/429 Vishay Siliconix Document Number: 70063 S-52433—Rev. J, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 5-3 ABSOLUTE MAXIMUM RATINGS Voltage Referenced to V– V+ 44 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputsa, VS, VD (V–) –2 V to (V+) +2 V or . . . . . . . . . . . . . . . . . . . . . . . . 30 mA, whichever occurs first Current (Any Terminal) 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle Max) 100 mA . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature (AK Suffix) –65 to 150 _C . . . . . . . . . . . . . . . . . . (DJ, DN Suffix) –65 to 125 _C . . . . . . . . . . . . . . Power Dissipation (Package)b 18-Pin Plastic DIPc 470 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-Pin CerDIPd 900 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-Pin PLCCf 800 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28-Pin Widebody SOICf 450 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 6.3 mW/ _C above 75_C. d. Derate 12 mW/ _C above 75_C. e. Derate 10 mW/ _C above 75_C. f. Derate 6 mW/ _C above 75_C. SPECIFICATIONSa Test Conditions Unless Otherwise Specified A Suffix –55 to 125 _C D Suffix –40 to 85 _C Parameter Symbol V+ = 15 V, V– = –15 V, WR = 0, RS = 2.4 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee VANALOG Full –15 15 –15 15 V Drain-Source On-Resistance rDS(on) VD = "10 V, VAL = 0.8 V IS = –1 mA, VAH = 2.4 V Room Full 55 100 125 100 125 W Greatest Change in rDS(on) Between Channelsg DrDS(on) –10 V < VS < 10 V IS = –1 mA Room 5 % Source Off Leakage Current IS(off) VS = "10 V, VD = #10 V VEN = 0 V Room Full "0.03 –0.5 –50 0.5 50 –0.5 –50 0.5 50 A Drain Off Lk C t ID(off) VD = "10 V VS = #10 V DG428 Room Full "0.07 –1 –100 1 100 –1 –100 1 100 A Leakage Current ID(off) VS = #10 V VEN = 0 V DG429 Room Full "0.05 –1 –50 1 50 –1 –50 1 50 nA Drain On Lk C t ID(on) VS = VD = "10 V VEN = 2.4 V V0 8 V DG428 Room Full "0.07 –1 –100 1 100 –1 –100 1 100 Leakage Current ID(on) EN VAL = 0.8 V VAH = 2.4 V DG429 Room Full "0.05 –1 –50 1 50 –1 –50 1 50 Digital Control Logic Input Current It V lt Hi h IAH VA = 2.4 V Full 0.01 1 1 A gp Input Voltage High IAH VA = 15 V Full 0.01 1 1 mA Logic Input Current Input Voltage Low IAL VEN = 0 V, 2.4 V, VA = 0 V RS = 0 V, WR = 0 V Full –0.01 –1 –1 mA Logic Input Capacitance Cin f = 1 MHz Room 8 pF Dynamic Characteristics Transition Time tTRANS See Figure 5 Room Full 150 250 300 250 300 Break-Before-Make Interval tOPEN See Figure 4 Full 30 10 10 Enable and Write Turn-On Time tON(EN,WR) See Figures 6 and 7 Room Full 90 150 225 150 225 ns Enable and Reset Turn-Off Time tOFF(EN,RS) See Figures 6 and 8 Room Full 55 150 300 150 300 Charge Injection Q VGEN = 0 V, RGEN = 0 W CL = 1 nF, See Figure 9 Room 1 pC Off Isolation OIRR VEN = 0 V, RL = 300 W, CL = 15 pF VS = 7 VRMS, f = 100 kHz Room –75 dB Source Off Capacitance CS(off) VS = 0 V, VEN = 0 V, f = 1 MHz Room 11 F Drain Off Capacitance CD(off) V0 V V 0 V DG428 Room 40 F Drain Off Capacitance CD(off) VD = 0 V, VEN = 0 V f1 MH DG429 Room 20 pF Drain On Capacitance CD(on) D , EN f = 1 MHz DG428 Room 54 Drain On Capacitance CD(on) DG429 Room 34 |
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