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W45NM60 Datasheet(PDF) 5 Page - STMicroelectronics

Part # W45NM60
Description  N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmes TM Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

W45NM60 Datasheet(HTML) 5 Page - STMicroelectronics

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STW45NM60
Electrical characteristics
5/12
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 250V, ID = 22.5A
RG =4.7Ω VGS = 10V
Figure 13
30
20
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 400V, ID = 45A,
RG =4.7Ω, VGS = 10V
Figure 13
16
23
40
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
45
A
ISDM
Source-drain current (pulsed)
180
A
VSD
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward on voltage
ISD = 45A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
Figure 15
508
10
40
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
Figure 15
650
14
43
ns
µC
A


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