STW15NB50 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STW15NB50

Description	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

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STW15NB50

STH15NB50FI

N-CHANNEL 500V - 0.33

Ω - 14.6A -

T0-247/ISOWATT218 PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.33

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

STW 15NB50

ST H15NB50FI

VDS

Drain-source Volt age (VGS =0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C

14.6

10. 5

A

ID

Drain Current (continuous) at Tc =100

oC9.2

6.6

A

IDM(

•)

Drain Current (pulsed)

58.4

58. 4

A

Ptot

Tot al Dissipation at Tc =25

oC190

80

W

Derating F act or

0.64

1. 52

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4

V/ ns

VISO

Insulat ion Withstand Volt age (DC)

4000

V

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

TYPE

VDSS

RDS(on)

ID

ST W15NB50

ST H15NB50FI

500 V

<0.36

Ω

< 0.36 Ω

14.6 A

10.5 A

June 1998

1

2

3

TO-247

ISOWATT218

1

2

3

1/9

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