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STW10NB60 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW10NB60
Description  N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW10NB60 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =300 V
ID = 4.5 A
RG =4.7
Ω
VGS =10 V
(see t est circuit, f igure 3)
25
11
35
15
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 480 V
ID =9 A VGS =10 V
RG =4.7
Ω
VGS =10 V
40
10.5
17.5
56
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =480 V
ID =9 A
RG =4.7
Ω VGS =10 V
(see t est circuit, f igure 5)
12
10
21
17
14
29
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
VSD (
∗)Forward On Voltage
ISD =10 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =9 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
(see t est circuit, f igure 5)
600
5.4
18
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STW10NB60
3/8


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