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STW10NB60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STW10NB60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =300 V ID = 4.5 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 3) 25 11 35 15 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 480 V ID =9 A VGS =10 V RG =4.7 Ω VGS =10 V 40 10.5 17.5 56 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =480 V ID =9 A RG =4.7 Ω VGS =10 V (see t est circuit, f igure 5) 12 10 21 17 14 29 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 10 40 A A VSD ( ∗)Forward On Voltage ISD =10 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =9 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC (see t est circuit, f igure 5) 600 5.4 18 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STW10NB60 3/8 |
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Similar Description - STW10NB60 |
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