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H5N5006FM-E Datasheet(PDF) 5 Page - Renesas Technology Corp |
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H5N5006FM-E Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page H5N5006FM Rev.2.00 Sep 07, 2005 page 5 of 6 0 0 1 2 3 4 0.4 0.8 1.2 1.6 2.0 5 VGS = 0 V 5 –50 0 50 100 150 200 0 1 2 3 4 ID = 10 mA 0.1 mA VDS = 10 V tr td(on) Vin 90% 90% 10% 10% Vout td(off) 90% 10% tf Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test Case Temperature Tc (°C) Gate to Source Cutoff Voltage vs. Case Temperature Switching Time Test Circuit Waveform 3 1 0.3 0.1 0.01 0.001 0.03 0.003 10 µ 100 µ 1 m 10 m 100 m 1 10 PDM PW T D = PW T θch – c (t) = γ s (t) • θch – c θch – c = 5.00°C/W, Tc = 25°C Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 5, 10 V 1 mA Vin Monitor D.U.T. Vin 10 V RL Vout Monitor 10 Ω VDD = 250 V |
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