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H5N3004P Datasheet(PDF) 4 Page - Renesas Technology Corp |
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H5N3004P Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page H5N3004P Rev.1.00 Sep 07, 2005 page 4 of 6 200 40 80 120 160 –40 0 40 80 120 160 0 0.2 0.5 2 5 20 50 100 100 20 50 5 10 2 0.5 1 0.2 1 10 25°C Tc = –25°C 75°C VGS = 10 V 15 A 5 A ID = 25 A Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 0 25 50 75 100 125 20000 50000 10000 1000 2000 5000 500 400 300 200 100 0 0 20 40 80 120 160 200 0 4 8 16 12 10000 1000 10 100 0.1 0.3 1 3 10 30 100 200 500 100 50 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 25 A VDS VGS VDD = 240 V 100 V 50 V Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Drain Current ID (A) Switching Characteristics Gate Charge Qg (nC) Dynamic Input Characteristics VDD = 50 V 100 V 240 V di / dt = 100 A / µs VGS = 0, Ta = 25°C tr td(on) td(off) tf tr tf VGS = 10 V, VDD = 150 V PW = 10 µs, duty ≤ 1 % RG = 10 Ω |
Similar Part No. - H5N3004P_05 |
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Similar Description - H5N3004P_05 |
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