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H5N2517FN Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N2517FN Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page  Rev.1.00, May.28.2004, page 1 of 7 H5N2517FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0371-0100Z Rev.1.00 May.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-220FN 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 250 V Gate to Source voltage VGSS ±30 V Drain current ID 20 A Drain peak current ID (pulse) Note1 80 A Body-Drain diode reverse Drain current IDR 20 A Body-Drain diode reverse Drain peak current IDR (pulse) Note1 80 A Avalanche current IAP Note3 7A Avalanche energy EAR Note3 3.0 mJ Channel dissipation Pch Note2 30 W Channel to case thermal impedance θch-c 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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