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H5N2517FN Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # H5N2517FN
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H5N2517FN Datasheet(HTML) 5 Page - Renesas Technology Corp

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H5N2517FN
Rev.1.00, May.28.2004, page 5 of 7
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature
Tc (
°C)
Gate to Source Cutoff Voltage
vs. Case Temperature
V
= 10 V
DS
Source to Drain Voltage
VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V
= 0 V
GS
10 V
5 V
I = 10mA
D
1mA
0.1mA
Normalized Transient Thermal Impedance vs. Pulse Width
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width
PW (s)
1
0.3
0.1
0.03
0.01
3
0.001
0.003
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Tc = 25
°C
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t) •
ch – c
ch – c = 4.17
°C/W, Tc = 25°C
θ
γ
θ
θ


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