H5N2517FN datasheet(4/8 Pages) RENESAS

Part #	H5N2517FN

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 8 page

H5N2517FN

Rev.1.00, May.28.2004, page 4 of 7

0.200

0.160

0.120

0.080

0.040

–40

0

40

80

120

160

0

0.2

0.5

2

5

20

50 100

100

20

50

5

10

2

0.5

1

0.2

1

10

V

= 10 V

GS

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

Drain Current

ID (A)

Forward Transfer Admittance vs.

Drain Current

DS

V

= 10 V

Pulse Test

I

= 20 A

D

Drain Current

ID (A)

Switching Characteristics

0.1

0.3

1

3

10

30

100

1000

200

500

100

20

50

10

0

20

40

60

80

100

2000

5000

1000

100

200

500

400

300

200

100

0

20

16

12

8

4

20

40

60

80

100

0

10000

1000

10

100

0.1

0.3

1

3

10

30

100

20

50

10

I = 20 A

D

VDD

VGS

Body-Drain Diode Reverse

Recovery Time

di / dt = 100 A / µs

V

= 0, Ta = 25

°C

GS

V

= 200 V

100 V

50 V

DS

r

t

d(on)

t

d(off)

t

t f

V

= 10 V, V

= 125 V

PW = 5

µs, duty < 1 %

R =10

Ω

GS

DD

G

r

t

Reverse Drain Current

IDR (A)

Gate Charge

Qg (nC)

Dynamic Input Characteristics

t f

10000

Typical Capacitance vs.

Drain to Source Voltage

VDS (V)

V

= 0

f = 1 MHz

GS

Ciss

Coss

Crss

17.5 A

10 A

V

= 50 V

100 V

200 V

DS

25

°C

Tc = –25

°C

75

°C

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