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FX30KMJ-03 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # FX30KMJ-03
Description  High-Speed Switching Use Pch Power MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FX30KMJ-03 Datasheet(HTML) 4 Page - Renesas Technology Corp

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FX30KMJ-03
Rev.1.00, Aug.20.2004, page 4 of 6
Transfer Characteristics (Typical)
Gate-Source Voltage VGS (V)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
Switching Characteristics (Typical)
Drain-Source Voltage VDS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage VSD (V)
–100
–101
–2 –3
–5 –7
–102
–2 –3
–5 –7
101
2
3
4
5
7
102
2
3
4
5
7
2
–100
–102
–7
–2 –3
–101
–5 –7
–2 –3
–5
101
102
2
3
5
4
4
7
103
2
3
5
7
td(off)
td(on)
tr
tf
0
–10
– 20
– 30
– 40
– 50
0– 2
– 4– 6– 8
–10
102
3
5
7
103
2
3
5
7
104
2
3
2
5
7
–100 –2
–101
–3 –5–7
–3 –5–7
–2
–102
3–5–7
–2 –3
2
0
– 2
– 4
– 6
– 8
–10
0
1020304050
VDS= –10V
– 20V
– 25V
0
–10
– 20
– 30
– 40
– 50
0– 0.4
– 0.8
–1.2
–1.6
–2.0
Tc = 25°C
VDS = –10V
Pulse Test
VDS = –10V
Pulse Test
Tc = 25°C
75°C
125°C
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
Tch = 25°C
VGS = –10V
VDD = –15V
RGEN = RGS = 50
Ω
Tch = 25°C
ID = – 30A
VGS = 0V
Pulse Test
Tc = 25°C
125°C
75°C


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