FX30ASJ-03 datasheet(2/7 Pages) RENESAS

Part #	FX30ASJ-03

Description	High-Speed Switching Use Pch Power MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 7 page

FX30ASJ-03

Rev.2.00

Aug 07, 2006

page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-source breakdown voltage

V(BR)DSS

–30

—

V

ID = –1 mA, VGS = 0 V

Gate-source leakage current

IGSS

—

±0.1

µA

VGS =

±20 V, VDS = 0 V

Drain-source leakage current

IDSS

—

–0.1

mA

VDS = –30 V, VGS = 0 V

Gate-source threshold voltage

VGS(th)

–1.3

–1.8

–2.3

V

ID = –1 mA, VDS = –10 V

Drain-source on-state resistance

rDS(ON)

—

48

61

m

Ω

ID = –15 A, VGS = –10 V

Drain-source on-state resistance

rDS(ON)

—

96

120

m

Ω

ID = –5 A, VGS = – 4 V

Drain-source on-state voltage

VDS(ON)

—

–0.72

–0.92

V

ID = –15 A, VGS = –10 V

Forward transfer admittance

| yfs |

—

11.9

—

S

ID = –15 A, VDS = –10 V

Input capacitance

Ciss

—

2460

—

pF

Output capacitance

Coss

—

410

—

pF

Reverse transfer capacitance

Crss

—

170

—

pF

VDS = –10 V, VGS = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—

20

—

ns

Rise time

tr

—

84

—

ns

Turn-off delay time

td(off)

—

123

—

ns

Fall time

tf

—

60

—

ns

VDD = –15 V, ID = –15 A,

VGS = –10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—

–1.0

–1.5

V

IS = –15 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

3.57

°C/W

Channel to case

Reverse recovery time

trr

—

50

—

ns

IS = –15 A, dis/dt = 50 A/

µs

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