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FS100VSJ-03F-A1 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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FS100VSJ-03F-A1 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.1.00, Aug.20.2004, page 1 of 6 FS100VSJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0264-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • V DSS : 30 V • r DS(ON) (max) : 4.0 m Ω • I D : 100 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns Outline TO-220S 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 3 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Conditions Drain-source voltage VDSS 30 V VGS = 0 V Gate-source voltage VGSS ±20 V VDS = 0 V Drain current ID 100 A Drain current (Pulsed) IDM 400 A Avalanche current (Pulsed) IDA 100 A L = 10 µH Source current ISM 100 A Source current (Pulsed) ISA 400 A Maximum power dissipation PD 125 W Channel temperature Tch – 55 to +150 °C Storage temperature Tstg – 55 to +150 °C Mass — 1.2 g Typical value |
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