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FS30KMJ-06F-A8 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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FS30KMJ-06F-A8 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page FS30KMJ-06F Rev.1.00, Aug.20.2004, page 4 of 6 Transfer Characteristics (Typical) Gate-Source Voltage VGS (V) Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) Switching Characteristics (Typical) Drain-Source Voltage VDS (V) Capacitance vs. Drain-Source Voltage (Typical) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Gate Charge Qg (nC) Source-Drain Diode Forward Characteristics (Typical) Source-Drain Voltage VSD (V) 0 10 20 30 40 50 02468 10 23 5 7 10 1 23 5 7 10 2 10 0 10 2 7 5 3 2 7 5 3 2 10 1 10 0 23 5 710 0 10 –1 23 5 710 1 23 5 710 2 23 5 7 10 1 23 5 7 10 2 10 0 10 4 7 5 3 2 7 5 3 2 10 3 10 2 10 3 7 5 3 2 7 5 3 2 10 2 10 1 td(off) tf tr td(on) 20V 40V 0 2 4 6 8 10 0 20406080 100 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 VDS = 10V Tc = 25°C VDS = 10V Pulse Test VDS = 10V Pulse Test Tc = 25°C 75°C 125°C Tch = 25°C f = 1MHz VGS = 0V Ciss Coss Crss Tch = 25°C, VDD = 30V VGS = 10V, RGEN = RGS = 50 Ω Tch = 25°C ID = 30A VGS = 0V Pulse Test Tc = 125°C 75°C 25°C |
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