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HSM276ASR Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HSM276ASR
Description  Silicon Schottky Barrier Diode for Balanced Mixer
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSM276ASR Datasheet(HTML) 2 Page - Renesas Technology Corp

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HSM276ASR
Rev.1.00 Apr 25 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
5
V
Reverse voltage
VR
3
V
Average rectified current
IO
*1
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note:
1. Per one device
Electrical Characteristics *1
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
3
V
IR = 1 mA
Reverse current
IR
50
µA
VR = 0.5 V
Forward current
IF
35
mA
VF = 0.5V
Capacitance
C
0.90
pF
VR = 0.5 V, f = 1 MHz
Capacitance deviation
∆C
0.10
pF
VR = 0.5 V, f = 1 MHz
ESD-Capability *
2
30
V
C = 200 pF, R = 0
Ω , Both forward and
reverse direction 1 pulse.
Notes: 1. Per one device
2. Failure criterion ; IR
≥ 100 µA at VR = 0.5 V


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