HSM198S datasheet(2/5 Pages) RENESAS

Part #	HSM198S

Description	Silicon Schottky Barrier Diode for Various Detector

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Manufacturer	RENESAS [Renesas Technology Corp]

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HSM198S

Rev.4.00 Apr 25, 2005 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

VR

10

V

Average forward current

IO *

1

30

mA

Junction temperature

Tj

125

°C

Storage temperature

Tstg

−55 to +125

°C

Note:

1. Two device total

Electrical Characteristics *1

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Forward voltage

VF

—

1.1

V

IF = 5 mA

Forward current

IF

4.5

—

mA

VF = 1 V

Reverse current

IR

—

70

µA

VR = 6 V

Capacitance

C

—

1.5

pF

VR = 1 V, f = 1 MHz

Capacitance deviation

∆VF

—

10

mV

IF = 5 mA

ESD Capability *

2

—

30

—

V

C = 200 pF, R = 0

Ω, Both forward

and reverse direction 1 pulse

Notes: 1. Per one device

2. Failure Criterrion; IR

> 140 µA at VR = 6 V

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