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2SK3287 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. 2SK3287
Description  Silicon N Channel MOS FET High Speed Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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2SK3287
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
300
mA
Drain peak current
I
D(pulse)
Note1
1.2
A
Body-drain diode reverse drain current
I
DR
300
mA
Channel dissipation
Pch
Note 2
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
V
I
D = 100 µA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±5
µAV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——1
µAV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.3
2.3
V
I
D = 10µ, VDS = 5 V
Static drain to source on state R
DS(on)
1.26
1.44
I
D = 150 mA,VGS = 10 V
Note 3
resistance
R
DS(on)
2.8
3.44
I
D = 50 mA,VGS = 4 V
Note 3
Forward transfer admittance
|y
fs|
145
220
mS
I
D = 150 mA, VDS = 10 V
Note 3
Input capacitance
Ciss
6
pF
V
DS = 10 V
Output capacitance
Coss
18
pF
V
GS = 0
Reverse transfer capacitance Crss
2
pF
f = 1 MHz
Turn-on delay time
t
d(on)
200
ns
I
D = 150 mA, VGS = 10 V
Rise time
t
r
600
ns
R
L = 66.6 Ω
Turn-off delay time
t
d(off)
1100
ns
Fall time
t
f
1100
ns
Note:
3. Pulse test
4. Marking is AN




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