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HVL147 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HVL147
Description  Silicon Epitaxial Trench Pin Diode for Antenna Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HVL147 Datasheet(HTML) 2 Page - Renesas Technology Corp

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HVL147
Rev.3.00 Jan 13, 2006 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
30
V
Forward current
IF
100
mA
Power dissipation
Pd
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
IR
100
nA
VR = 30 V
Forward voltage
VF
1.00
V
IF = 10 mA
Capacitance
C
0.31
pF
VR = 1 V, f = 1 MHz
2.5
IF = 2 mA, f = 100 MHz
Forward resistance
rf
1.5
IF = 10 mA, f = 100 MHz
ESD-Capability *
1
100
V
C = 200 pF, R = 0
Ω, Both forward and
reverse direction 1 pulse.
Notes
: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.


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