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FS10AS-2 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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FS10AS-2 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page FS10AS-2 Rev.2.00 Nov 21, 2006 page 4 of 6 Transfer Characteristics (Typical) Gate-Source Voltage VGS (V) Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 04 812 16 20 100 25 102 37 25 101 37 0 4 8 12 16 20 Tc = 25°C VDS = 10V Pulse Test 100 101 2 3 5 7 102 2 3 5 4 4 7 VDS = 5V Pulse Test Tc = 25°C 75°C 125°C Switching Characteristics (Typical) Drain-Source Voltage VDS (V) Capacitance vs. Drain-Source Voltage (Typical) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Gate Charge Qg (nC) Source-Drain Diode Forward Characteristics (Typical) Source-Drain Voltage VSD (V) 100 25 102 37 25 101 37 101 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 100 35 7 2 101 35 7 2 102 33 57 2 Ciss Coss Crss Tch = 25°C f = 1MHz VGS = 0V 100 101 2 3 4 5 7 102 2 3 4 5 7 td(off) td(on) tr Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50 Ω tf 0 4 8 12 16 20 048 12 16 20 VDS = 20V 50V 80V Tch = 25°C ID = 10A 0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0 VGS = 0V Pulse Test Tc = 125°C 75°C 25°C |
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