CT60AM-18F datasheet(3/6 Pages) RENESAS

Part #	CT60AM-18F

Description	Insulated Gate Bipolar Transistor

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 6 page

CT60AM-18F

Rev.2.00 Jul 07, 2006 page 3 of 5

Performance Curves

Collector Current vs.

Collector-Emitter Voltage (Typical)

Collector-Emitter Voltage VCE (V)

Collector-Emitter Saturation Voltage vs.

Gate-Emitter Voltage (Typical)

Gate-Emitter Voltage VGE (V)

Collector Current vs.

Gate-Emitter Voltage (Typical)

Gate-Emitter Voltage VGE (V)

Switching Time vs.

Gate Resistance (Typical)

Gate Resistance RG (Ω)

Switching Characteristics (Typical)

Collector Current IC (A)

Capacitance vs.

Collector-Emitter Voltage (Typical)

Collector-Emitter Voltage VCE (V)

0

40

80

120

160

012345

PD = 180W

VGE = 20V

Tc = 25

°C

Pulse Test

0

1

2

3

4

5

0

4

8

12

16

20

Tc = 25

°C

Pulse Test

30A

60A

15A

IC = 120A

10V

15V

8V

7V

9V

0

40

80

120

160

048

12

16

Tc = 25

°C

VCE = 5V

Pulse Test

100

101

23

5

7

102

23

5

7

10-1

100

2 3 5 7

101

2 3 5 7

102

2 3 5 7

103

2 3 5 7

103

2

3

5

7

104

2

3

5

7

103

104

2

3

5

7

101

2

3

5

7

102

2

3

5

7

100

101

23

5

7

102

2

3

5

7

101

103

2

3

5

7

102

23

5 7

102

2

3

5

7

101

Tj =

25

°C

VGE = 0V

f = 1MHz

Cies

Coes

Cres

Tj =

25

°C

VCC = 300V

VGE = 15V

RG = 10

Ω

td(off)

td(on)

tr

tf

Tj =

25

°C

VCC = 300V

VGE = 15V

IC = 60A

td(off)

td(on)

tr

tf

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