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M38B71M1 Datasheet(PDF) 76 Page - Renesas Technology Corp

Part No. M38B71M1
Description  SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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M38B71M1 Datasheet(HTML) 76 Page - Renesas Technology Corp

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38B7 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
75
Fig. 83 Digit timing waveform (1)
Power Dissipation Calculating Example 1
(Fixed number depending on microcomputer’s standard)
• VOH output fall voltage of high-breakdown port
2 V (max.); | Current value | = at 18 mA
• Resistor value 43 V / 900
µs = 48 kΩ (min.)
• Power dissipation of internal circuit (CPU, ROM, RAM etc.)
= 5 V ✕ 15 mA = 75 mW
(Fixed number depending on use condition)
• Apply voltage to VEE pin: Vcc – 45 V
• Timing number 17; digit number 16; segment number 20
• Ratio of Toff time corresponding Tdisp time: 1/16
• Turn ON segment number during repeat cycle: 31
• All segment number during repeat cycle: 340 (= 17 ✕ 20)
• Total number of built-in resistor: for digit, 16; for segment, 20
• Digit pin current value 18 (mA)
• Segment pin current value 3 (mA)
(1) Digit pin power dissipation
{18 ✕ 16 ✕ (1 – 1 / 16) ✕ 2} / 17 = 31.77 mW
(2) Segment pin power dissipation
{3 ✕ 31 ✕ (1– 1 / 16) ✕ 2} / 17 = 10.26 mW
(3) Pull-down resistor power dissipation (digit)
[{45 – 2}2/ 48 ✕ (16 ✕ 16 / 16) ✕ (1 – 1 / 16)] / 17 = 33.94 mW
(4) Pull-down resistor power dissipation (segment)
[{45 – 2}2/ 48 ✕ (31 ✕ 20 / 20) ✕ (1 – 1 / 16)] / 17 = 65.86 mW
(5) Internal circuit power dissipation (CPU, ROM, RAM etc.)
= 75 mW
(1) + (2)+ (3) + (4) + (5) = 217 mW
DIG0
DIG1
DIG2
DIG3
DIG13
DIG14
DIG15
Timing
number
12
3
16
17
15
14
Tscan
Repeat cycle


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