STTH802CB datasheet(4/8 Pages) STMICROELECTRONICS

Part #	STTH802CB

Description	HIGH EFFICIENCY ULTRAFAST DIODE

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STTH802/CT/CB/CFP

4/8

0

10

20

30

40

50

60

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

I (A)

M

IM

t

δ=0.5

Fig. 5-2: Non repetitive surge peak forward

current versus overload duration per diode

(TO-220FPAB).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0

25

50

75

100

125

150

175

Tamb(°C)

Rth(j-a)=Rth(j-c)

DPAK (S=0.5cm²)

Rth(j-a)=70°C:W

TO-220AB/DPAK

TO-220FPAB

I

)(A)

F(av

Fig. 6: Average forward current versus ambient

temperature (

δ = 0.5, per diode).

10

100

1

10

100

1000

VR(V)

F=1MHz

Vosc=30mV

RMS

Tj=25°C

C(pF)

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode).

10

100

1000

10

100

1000

dIF/dt(A/µs)

IF=4A

VR=200V

Tj=125°C

Q

(nC)

RR

Fig. 8: Reverse recovery charges versus dIF/dt

(90% confidence, per diode).

0.1

1.0

10.0

100.0

10

100

1000

dI /dt(A/µs)

F

IF=4A

VR=200V

Tj=125°C

I

(A)

RM

Fig. 9: Peak reverse recovery current versus

dIF/dt (90% confidence, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

25

50

75

100

125

150

Tj(°C)

I

RM

Q

RR

I

F=4A

V

R=200V

Q

; I

[Tj] / Q

; I

[Tj = 125°C]

RR

RM

RR

RM

Fig. 10: Dynamic parameters versus junction

temperature.

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