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STTH802CT Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH802CT Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page STTH802/CT/CB/CFP 2/8 Symbol Parameter Tests conditions Min. Typ. Max. Unit IR* Reverse leakage current Tj = 25°C VR =VRRM 4 µA Tj = 125°C 2 40 VF** Forward voltage drop Tj = 25°C IF = 4 A 1.1 V Tj = 125°C IF = 4 A 0.81 0.95 Tj = 25°C IF = 8 A 1.25 Tj = 125°C IF = 8 A 0.95 1.1 Pulse test: * tp = 5ms, δ <2% ** tp = 380µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=0.80xIF(AV) + 0.037 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Maximum Unit Rth (j-c) Junction to case TO-220AB / DPAK Per diode 4.0 °C/W TO-220FPAB 6.5 TO-220AB / DPAK Total 2.5 TO-220FPAB 5 Rth (j-c) Coupling TO-220AB / DPAK 1 °C/W TO-220FPAB 3.5 When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) THERMAL PARAMETERS Symbol Parameter Tests conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25°C IF = 0.5 A Irr = 0.25 A IR =1A 13 20 ns tfr Forward recovery time Tj = 25°C IF =4A dIF/dt = 100 A/ µs VFR =1.1xVFmax 50 ns VFP Forward recovery voltage Tj = 25°C IF =4A dIF/dt = 100 A/ µs 2.4 V DYNAMIC ELECTRICAL CHARACTERISTICS |
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