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HAF1008 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HAF1008
Description  Silicon P Channel MOS FET Series Power Switching
Download  11 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1008 Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 2 of 11
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
–16
V
Gate to source voltage
VGSS
2.5
V
Drain current
ID
–20
A
Drain peak current
ID (pulse)
Note1
–40
A
Body-drain diode reverse drain
current
IDR
–20
A
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
VIH
–3.5
V
Input voltage
VIL
–1.2
V
IIH1
–100
µA
Vi = –8 V, VDS = 0
IIH2
–50
µA
Vi = –3.5 V, VDS = 0
Input current
(Gate non shut down)
IIL
–1
µA
Vi = –1.2 V, VDS = 0
IIH(sd)1
–0.8
mA
Vi = –8 V, VDS = 0
Input current
(Gate shut down)
IIH(sd)2
–0.35
mA
Vi = –3.5 V, VDS = 0
Shut down temperature
Tsd
175
°C
Channel temperature
Gate operation voltage
Vop
–3.5
–12
V


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