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HAF1008 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part No. HAF1008
Description  Silicon P Channel MOS FET Series Power Switching
Download  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1008 Datasheet(HTML) 6 Page - Renesas Technology Corp

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HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 6 of 11
Reverse Drain Current
IDR (A)
Body to Drain Diode Reverse
recovery Time
Drain Current
ID
(A)
Switching Characteristics
-20
-16
-12
-8
-4
0
-0.4
-0.8
-1.2
-1.6
-2.0
GS
V
= -5 V
0 V
Source to Drain Voltage
VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
10000
1000
100
0
-10
-20
-30
-40
-60
-50
Drain to Source Voltage VDS (V)
Typical capacitance vs.
Drain to Source Voltage
500
-0.1 -0.2
-0.5 -1
-2
-5
-10 -20
200
100
20
50
10
-50
di / dt = 50 A /
µs
V
= 0, Ta = 25
°C
GS
5
-0.1 -0.2
-0.5 -1
-2
-5
-10 -20
2
1
0.5
-50
50
20
10
100
r
t
VGS = -10 V, VDD = -30 V
PW = 300
µs, duty < 1 %
t f
d(on)
t
d(off)
t
V
= 0
f = 1 MHz
GS


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