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HAF1008 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. HAF1008
Description  Silicon P Channel MOS FET Series Power Switching
Download  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1008 Datasheet(HTML) 5 Page - Renesas Technology Corp

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HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 5 of 11
-1
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
Pulse Test
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-0.1 -0.2
-0.5 -1
-2
-5
-10 -20
200
100
20
50
10
Drain Current ID (A)
Static Drain to Source Sate Resistance
vs. Drain Current
100
80
60
40
20
-25
0
25
50
75
100 125 150
0
Pulse Test
Case Temperature
Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
20
50
10
2
1
5
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
-5 A
I
= -10 A
D
-50
V
= -4 V
GS
-10 V
I
= -10 A
D
-5 A
-10 A
-0.1 -0.2
-0.5 -1
-2
-5
-10 -20
-50
0.5
Tc = -25
°C
25
°C
75
°C
DS
V
= -10 V
Pulse Test
V
= -4 V
GS
-10 V
Pulse Test
-5 A


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