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HAF1002 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part No. HAF1002
Description  Silicon P Channel MOS FET Series Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1002 Datasheet(HTML) 6 Page - Renesas Technology Corp

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HAF1002(L), HAF1002(S)
Rev.2.00 Sep 07, 2005 page 6 of 8
–12
–10
–8
–4
–6
–2
0
0.0001
1
200
180
160
140
120
0
100
–2
–4
–6
–8
–10
ID = –5 A
0.001
0.01
0.1
–9 V
VDD = –36 V
–24 V
–12 V
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Time of Load-Short Test PW (S)
Shutdown Case Temperature vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 2.50°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–5 V
RL
Vout
Monitor
50
VDD
= –30 V


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