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HAF1002 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. HAF1002
Description  Silicon P Channel MOS FET Series Power Switching
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF1002 Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAF1002(L), HAF1002(S)
Rev.2.00 Sep 07, 2005 page 4 of 8
Main Characteristics
80
60
40
20
0
0
50
100
150
200
–500
–100
–200
–20
–50
–10
–2
–5
–1
–0.5
–0.3
–0.3 –0.5 –1
–2
–5 –10 –20
–50 –100
–50
–40
–30
–20
–10
0
–2
0
–4–6–8
–10
–10 V
VGS = –3 V
–3.5 V
0
0
–1
–2
–3
–4
–5
Tc = –25
°C
25
°C
75
°C
Ta = 25
°C
20
µs
100
µs
1 ms
PW
=
10
ms
DC
Operation
(Tc
=
25
°C)
Operation in this area
is limited by RDS (on)
Thermal shut down
Operation area
–20
–16
–12
–8
–4
–8 V
–6 V
–5 V
–4 V
VDS = –10 V
Pulse Test
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
0
–4
–6
–8
–10
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20
0.2
0.1
0.02
0.05
0.01
–5 A
ID = –10 A
–2 A
–50
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
VGS = –4 V
–10 V


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