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HSB83YP Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HSB83YP Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page  HSB83YP Rev.1.00 Mar 04, 2005 page 2 of 4 Absolute Maximum Ratings * 2 (Ta = 25 °C) Item Symbol Value Unit Peak reverse voltage VRM 300 V Reverse voltage VR 250 V Peak forward current IFM 300 mA Non-Repetitive peak forward surge current IFSM * 1 2 A Average rectified current IO 100 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. Value at duration of 10 ms. 2. Two device total. Electrical Characteristics * (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.2 V IF = 100 mA IR1 — — 0.2 VR = 250 V Reverse current IR2 — — 100 µA VR = 300 V Capacitance C — — 3.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 100 ns IF = IR = 30 mA, Irr = 3 mA, RL= 100 Ω Note : Per one device. |
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