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HM62V16256C Datasheet(PDF) 12 Page - Renesas Technology Corp

Part No. HM62V16256C
Description  4 M SRAM (256-kword ´ 16-bit)
Download  20 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HM62V16256C Datasheet(HTML) 12 Page - Renesas Technology Corp

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HM62V16256C Series
10
Write Cycle
HM62V16256C
-5
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t
WC
55
ns
Address valid to end of write
t
AW
50
ns
Chip selection to end of write
t
CW
50
ns
5
Write pulse width
t
WP
40
ns
4
LB, UB valid to end of write
t
BW
50
ns
Address setup time
t
AS
0
ns
6
Write recovery time
t
WR
0
ns
7
Data to write time overlap
t
DW
25
ns
Data hold from write time
t
DH
0—
ns
Output active from end of write
t
OW
5
ns
2
Output disable to output in High-Z
t
OHZ
0
20
ns
1, 2
Write to output in high-Z
t
WHZ
0
20
ns
1, 2
Notes: 1. t
CHZ, tOHZ, t WHZ and tBHZ are defined as the time at which the outputs achieve the open circuit
conditions and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
HZ max is less than tLZ min both for a given device
and from device to device.
4. A write occures during the overlap of a low
CS1, a high CS2, a low WE and a low LB or a low UB.
A write begins at the latest transition among
CS1 going low, CS2 going high, WE going low and LB
going low or
UB going low. A write ends at the earliest transition among CS1 going high, CS2
going low,
WE going high and LB going high or UB going high. t
WP is measured from the beginning
of write to the end of write.
5. t
CW is measured from the later of CS1 going low or CS2 going high to the end of write.
6. t
AS is measured from the address valid to the beginning of write.
7. t
WR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
cycle.


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