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HVR100 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. HVR100
Description  Variable Capacitance Diode for AM tuner
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HVR100 Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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HVR100
Rev.7.00 Feb 21, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
15
V
IR = 10 µA
Reverse current
IR
100
nA
VR = 9 V
C1
421.5
524.6
VR = 1 V, f = 1 MHz
C3
182.0
275.7
VR = 3 V, f = 1 MHz
C5
73.2
121.4
VR = 5 V, f = 1 MHz
C6
42.2
72.2
VR = 6 V, f = 1 MHz
C7
26.2
41.6
VR = 7 V, f = 1 MHz
Capacitance
C8
20.4
28.2
pF
VR = 8 V, f = 1 MHz
Capacitance ratio
n
16
C1 / C8
Figure of merit
Q
200
C = 450 pF, f = 1 MHz
Matching error
∆C/C *1
3.0
%
VR = 1 to 8 V, f = 1 MHz
ESD-Capability *
2
80
V
C = 200 pF, Both forward and
reverse direction 1 pulse.
Note:
1. Each group shall uniform a multiple of 3 diodes.
A set of HVR100 is of uniform C-V characteristics.
Measure max. value and min. value of capacitance at each bias point of VR = 1V through 8 V.
Calculate Matching Error,
(Cmax – Cmin)
Cmin
∆C/C =
× 100 (%)
2. Failure criterion ; IR < 100 nA at VR = 9 V


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