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RJK5020DPK Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK5020DPK
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK5020DPK Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK5020DPK
Rev.2.00 Dec 19, 2006 page 3 of 6
Main Characteristics
400
300
200
100
0
50
100
150
200
50
40
30
20
10
0
4
8
12
16
20
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
10 V
1
30
100
3
10
300
1000
0.2
0.1
0.05
1
0.5
0.02
0.01
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
VGS = 10 V
Pulse Test
5.3 V
300
100
30
10
3
1
13
10
30
300
1000
0.3
0.01
0.1
0.03
1000
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
100
Ta = 25
°C
100
µs
1 ms
10
µs
Operation in this
area is limited by
R
DS(on)
DC Operation
(Tc = 25
°C)
PW = 10 ms
(1shot)
VGS = 4.9 V
5.5 V
5.7 V
7 V
0.5
0.4
0.3
0.2
0.1
−25
0
25
50
75
100 125
150
0
Case Temperature
Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
VGS = 10 V
Pulse Test
ID = 40 A
10 A
20 A
02
46
8
10
20
50
10
1
2
5
0.2
0.5
0.1
100
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
−25°C


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